Researchers from Fudan University in Shanghai have developed a picosecond-level flash memory device with an unprecedented program speed of 400 picoseconds — equivalent to operating 25 billion times ...

Rice-sized memory device breaks speed barrier once thought impossible, capable of erasing and rewriting data 100,000 times faster than before In a world fixated on the race for superior artificial ...

The underlying issue is closely linked to the end of Dennard scaling, a principle that once allowed engineers to shrink ...

One way or another, it seems that prices for future Apple devices are going up. If it’s not because of tariffs, a new report ...

Breakthrough approach delivers better scaling and power efficiency, but at the cost of new processes like wafer thinning, bonding, and advanced debug.

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

"The wurtzite ferroelectric nitrides were recently discovered and have a broad range of applications in memory electronics, RF electronics, acousto-electronics, microelectromechanical systems and ...

Texas Instruments—known for calculators—was actually behind some of the biggest breakthroughs in tech history. From inventing ...

Apple's iPhone 18 models will adopt TSMC's 2nm manufacturing process for the next-generation A20 chip, which will bring ...

New 2D material could trash Chipzilla’s best with faster, leaner chips  Chinese boffins have emerged from their smoke-filled ...

A new class of semiconductors that can store information in electric fields could enable computers that run on less power, ...

W GaN converter from STMicroelectronics targets fast chargers, adapters, and power supplies for home appliances.