STMicroelectronics’ STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and high thermal performance with ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

Shaun Milano, Senior Director Applications Marketing, and Carsten Himmele, Segment Marketing Manager, both at Allegro Microsystems, discuss the company’s recent product innovations, which include new ...

Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High ...

Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...

Power-SOI has been produced by SOITEC for decades in 200mm and smaller wafer sizes, with typical SOI top layer thickness in the micrometer range. Leveraging its Smart Cut™ technology, SOITEC has ...

The demonstration design uses the ams OSRAM AS6212 temperature sensor and STMicroelectronics LIS2DW12 accelerometer boards ...

Yannick Bedin, CEO of Eumetrys, discusses the company’s metrology expertise, looking at the ways in which it is helping its customers to address the key challenges and opportunities they face within ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...