STMicroelectronics’ STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and high thermal performance with ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High ...

Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...

The demonstration design uses the ams OSRAM AS6212 temperature sensor and STMicroelectronics LIS2DW12 accelerometer boards ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

The EPC9196 has been validated in real-world conditions, powering a 3-kW servo motor at 150 VDC and 60 kHz switching ...

GaN-on-SiC epitaxial wafer company SweGaN has appointed Pontus de Laval, senior advisor at one of SweGaN’s major shareholders ...

Shaun Milano, Senior Director Applications Marketing, and Carsten Himmele, Segment Marketing Manager, both at Allegro Microsystems, discuss the company’s recent product innovations, which include new ...

Navitas Semiconductor has announced a partnership with BrightLoop supporting their latest series of hydrogen fuel-cell ...

“Our collaboration with Infineon has led to significant advances in UAV electronics,” says Amrit Singh, founder of Reflex ...

Power-SOI has been produced by SOITEC for decades in 200mm and smaller wafer sizes, with typical SOI top layer thickness in the micrometer range. Leveraging its Smart Cut™ technology, SOITEC has ...